Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388978
Title: Modelling of silicon implanted gallium arsenide
Author: Apiwatwaja, R.
ISNI:       0000 0001 3425 6897
Awarding Body: University of Surrey
Current Institution: University of Surrey
Date of Award: 1997
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Abstract:
This thesis reports the development of a model to explain the electrical properties of Si implanted GaAs. The results show that most of the implanted silicon atoms occupy lattice sites and are electrically active. The net carrier concentration is determined by the relative concentration of silicon atoms on gallium and arsenic lattice sites respectively. The activation mechanism is shown to involve the breaking up of complex defects in the form of substitutional silicon with vacancies. The energy required for this process is about 1 to 1.5 eV. A lower value of activation energy (about 0.5 eV) has also been measured and is suggested to be associated with the site switching of silicon from arsenic to gallium sites, when a gallium vacancy diffuses close to a silicon on an arsenic site. This process has diffusion energy of about 2.5 to 3.0 eV. The activation energy obtained from sheet carrier concentration measurements corresponds to a combination of the two activation mechanisms. Which of these mechanisms is observed in an experiment depends on various parameters, such as the implantation conditions, the quality of the encapsulant and the annealing conditions. The model can explain the variations in activation energy (0.5 to 1.5 eV) reported in the literature.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.388978  DOI: Not available
Keywords: Ion implantation; GaAs
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