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Title: Diffusion models for the doping of semiconductor crystals
Author: Hearne, M. T.
ISNI:       0000 0001 3551 0690
Awarding Body: University of Nottingham
Current Institution: University of Nottingham
Date of Award: 1988
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Dopant diffusion/Si and GaAs