Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380790
Title: On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy
Author: Newstead, Simon Marc
ISNI:       0000 0001 3444 3879
Awarding Body: City of London Polytechnic
Current Institution: London Metropolitan University
Date of Award: 1987
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Abstract:
Si and Sn doped GaAs epilayers were grown with electron concentrations from 8x10[to the power of 14] cm[to the power of -3] (u77=28x10[to the power of 3] cm[to the power of 2]/V-8) up to a peak of 1.16x10[to the power of 19] cm[to the power of-3] (using Sn).
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.380790  DOI: Not available
Keywords: 530 Physics
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