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Title: On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy
Author: Newstead, Simon Marc
ISNI:       0000 0001 3444 3879
Awarding Body: City of London Polytechnic
Current Institution: London Metropolitan University
Date of Award: 1987
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Si and Sn doped GaAs epilayers were grown with electron concentrations from 8x10[to the power of 14] cm[to the power of -3] (u77=28x10[to the power of 3] cm[to the power of 2]/V-8) up to a peak of 1.16x10[to the power of 19] cm[to the power of-3] (using Sn).
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: 530 Physics