Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378152
Title: The fabrication of very short gate-length GaAs field effect transistor devices
Author: Patrick, William
ISNI:       0000 0001 3477 2955
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 1985
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Abstract:
The object of the work described in this thesis was to fabricate GaAs Metal-Semiconductor Field Effect Transistors with gate lengths comparable with the smallest structures fabricated previously in this Department using electron beam lithography. It was envisaged that MESFETs would be fabricated on both solid substrates and on thin active membranes of GaAs. It was then hoped to transfer the technology developed for the fabrication of MESFETs to the fabrication of High Electron Mobility Transistors (HEMTs). A substantial part of the work was devoted to the development of a low temperature contact technology which could be used for the formation of ohmic contacts to GaAs. The low temperature was thought to be necessary to prevent undesired diffusion of the contact material during annealing, particularly on devices with closely spaced drain-source contacts.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.378152  DOI: Not available
Keywords: Transistor device fabrication
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