Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.377272
Title: The influence of optical excitation and hydrostatic pressure on the conductivity of doped GaAs, InP and (InGa)(AsP)
Author: Wadley, Nicholas James
ISNI:       0000 0001 3549 9102
Awarding Body: University of Surrey
Current Institution: University of Surrey
Date of Award: 1987
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Abstract:
Resistivity and photoconductivity measurements have been made, using hydrostatic pressures up to 75 kb on localised states in some III - V semiconductors, including ones with transition metal ions present. The systems investigated were GaAs: Sn, GaAs: Cr: S, n - In[x] G[1-x] As[y] P[1-y], InP: Fe and GaAs: Cr. Many electronic transitions involving localised states (some deep in the band gap) appear to have anomolously high pressure coefficients. Possible explanations are discussed.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.377272  DOI: Not available
Keywords: Semiconductor resistivity study
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