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Title: An investigation into the use of group VI elements as dopants in III-V materials prepared by molecular beam epitaxy
Author: Andrews, David Arthur
ISNI:       0000 0001 3423 9106
Awarding Body: City of London Polytechnic
Current Institution: London Metropolitan University
Date of Award: 1987
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An electrochemical cell Pt/Ag/AgI/Ag2X/Pt (X=S,Se) has been used as a highly controllable source of S2 or Se2 molecules for n-type doping of GaAs and Ga1As grown by Molecular Beam Epitaxy (MBE). This source produces a pure oeam ot chalcogen dimers at low temperature (200-300°C) and is simply programmed by an applied emf. The response time of the cell is of the order of one second enabling complicated doping profiles to be achieved.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: 530 Physics