Use this URL to cite or link to this record in EThOS: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368206 |
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Title: | Transmission electron microscopy of defects and internal fields in GaN structures. | ||||
Author: | Mokhtari, Hossein. |
ISNI:
0000 0001 3414 0640
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Awarding Body: | University of Bristol | ||||
Current Institution: | University of Bristol | ||||
Date of Award: | 2001 | ||||
Availability of Full Text: |
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Abstract: | |||||
No abstract available
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Supervisor: | Not available | Sponsor: | Not available | ||
Qualification Name: | Thesis (Ph.D.) | Qualification Level: | Doctoral | ||
EThOS ID: | uk.bl.ethos.368206 | DOI: | Not available | ||
Keywords: | TRANSMISSION ELECTRON MICROSCOPY; MICROSTRUCTURE; GALLIUM NITRIDES; INDIUM NITRIDES; INTERFACES; MOLECULAR BEAM EPITAXY; HEXAGONAL LATTICES; TEMPERATURE DEPENDENCE; THIN FILMS; SCREW DISLOCATIONS; SILICON ADDITIONS; CRYSTAL DOPING; ELECTRON SPECTROSCOPY | ||||
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