| Use this URL to cite or link to this record in EThOS: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368206 |
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| Title: | Transmission electron microscopy of defects and internal fields in GaN structures. | ||||
| Author: | Mokhtari, Hossein. |
ISNI:
0000 0001 3414 0640
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| Awarding Body: | University of Bristol | ||||
| Current Institution: | University of Bristol | ||||
| Date of Award: | 2001 | ||||
| Availability of Full Text: |
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| Abstract: | |||||
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No abstract available
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| Supervisor: | Not available | Sponsor: | Not available | ||
| Qualification Name: | Thesis (Ph.D.) | Qualification Level: | Doctoral | ||
| EThOS ID: | uk.bl.ethos.368206 | DOI: | Not available | ||
| Keywords: | TRANSMISSION ELECTRON MICROSCOPY; MICROSTRUCTURE; GALLIUM NITRIDES; INDIUM NITRIDES; INTERFACES; MOLECULAR BEAM EPITAXY; HEXAGONAL LATTICES; TEMPERATURE DEPENDENCE; THIN FILMS; SCREW DISLOCATIONS; SILICON ADDITIONS; CRYSTAL DOPING; ELECTRON SPECTROSCOPY | ||||
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