Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361772
Title: Characterisation of reactive ion etch processes for ternary III-V semiconductors
Author: Bunting, Andrew Stuart
ISNI:       0000 0001 3509 1262
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 1996
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Abstract:
The work presented within this thesis concerns the development and characterisation of reactive ion etch processes for the compound Ill-V semiconductors Al0.3Ga0.7As, In0.53Ga0.47 As and In0.52Al0.48As. Two different etch chemistries, one based on the mixture of methane and hydrogen and the other formed from halogenated gases were studied.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.361772  DOI: Not available
Keywords: Physical chemistry
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