| Use this URL to cite or link to this record in EThOS: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361772 |
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| Title: | Characterisation of reactive ion etch processes for ternary III-V semiconductors | ||||||
| Author: | Bunting, Andrew Stuart |
ISNI:
0000 0001 3509 1262
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| Awarding Body: | University of Glasgow | ||||||
| Current Institution: | University of Glasgow | ||||||
| Date of Award: | 1996 | ||||||
| Availability of Full Text: |
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| Abstract: | |||||||
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The work presented within this thesis concerns the development and characterisation of reactive ion etch processes for the compound Ill-V semiconductors Al0.3Ga0.7As, In0.53Ga0.47 As and In0.52Al0.48As. Two different etch chemistries, one based on the mixture of methane and hydrogen and the other formed from halogenated gases were studied.
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| Supervisor: | Not available | Sponsor: | Not available | ||||
| Qualification Name: | Thesis (Ph.D.) | Qualification Level: | Doctoral | ||||
| EThOS ID: | uk.bl.ethos.361772 | DOI: | Not available | ||||
| Keywords: | Physical chemistry | ||||||
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