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Title: A first principles study of defects in semiconductors.
Author: Goss, Jonathan Paul.
ISNI:       0000 0001 3507 0576
Awarding Body: University of Exeter
Current Institution: University of Exeter
Date of Award: 1997
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Diamond colour centres; Gallium arsenide; Silicon