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Title: Defect studies of GaAs and Al GaAs grown by chemical beam epitaxy.
Author: Jamal, Zul Azhar bin Zahid.
ISNI:       0000 0001 3588 6591
Awarding Body: University of Liverpool
Current Institution: University of Liverpool
Date of Award: 1993
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Semiconductors