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Title: Deep level transient spectroscopy of III-IV semiconductors.
Author: Arbaoui, Amar.
ISNI:       0000 0001 3426 2816
Awarding Body: University of Nottingham
Current Institution: University of Nottingham
Date of Award: 1989
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Semiconductor device analysis