Use this URL to cite or link to this record in EThOS: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.340213 |
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Title: | Advanced electron microscopy of wide band-gap semiconductor materials. | ||||
Author: | Fay, Michael W. |
ISNI:
0000 0001 3458 5068
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Awarding Body: | University of Sheffield | ||||
Current Institution: | University of Sheffield | ||||
Date of Award: | 2000 | ||||
Availability of Full Text: |
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Abstract: | |||||
No abstract available
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Supervisor: | Not available | Sponsor: | Not available | ||
Qualification Name: | Thesis (Ph.D.) | Qualification Level: | Doctoral | ||
EThOS ID: | uk.bl.ethos.340213 | DOI: | Not available | ||
Keywords: | GALLIUM NITRIDES; THIN FILMS; MOLECULAR BEAM EPITAXY; ALUMINIUM NITRIDES; LAYERS; TRANSMISSION ELECTRON MICROSCOPY; INTERFACES; SEMICONDUCTOR MATERIALS | ||||
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