Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.340213
Title: Advanced electron microscopy of wide band-gap semiconductor materials.
Author: Fay, Michael W.
ISNI:       0000 0001 3458 5068
Awarding Body: University of Sheffield
Current Institution: University of Sheffield
Date of Award: 2000
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.340213  DOI: Not available
Keywords: GALLIUM NITRIDES; THIN FILMS; MOLECULAR BEAM EPITAXY; ALUMINIUM NITRIDES; LAYERS; TRANSMISSION ELECTRON MICROSCOPY; INTERFACES; SEMICONDUCTOR MATERIALS
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