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Title: The design of active resistors and transconductors in a CMOS technology
Author: Chan, Pak Kwong
ISNI:       0000 0001 3526 9024
Awarding Body: University of Plymouth
Current Institution: University of Plymouth
Date of Award: 1992
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This thesis surveys linearisation techniques for implementing monolithic MOS active resistors and transconductors, and investigates the design of linear tunable resistors and transconductors. Improving linearity and tunability in the presence of non-ideal factors such as bulk modulation, mobility-degradation effects and mismatch of transistors is a principal objective. A family of new non-saturation-mode resistors and two novel saturation-mode transconductors are developed. Where possible, approximate analytical expressions are derived to explain the principles of operation. Performance comparisons of the new structures are made with other well-known circuits and their relative advantages and disadvantages evaluated. Experimental and simulation results are presented which validate the proposed linearisation techniques. It is shown that the proposed family of resistors offers improved linearity whilst the transconductors combine extended tunability with low distortion. Continuous-time filter examples are given to demonstrate the potential of these circuits for application in analogue signal-processing tasks.
Supervisor: Not available Sponsor: GEC Plessey Semiconductors
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Components