Use this URL to cite or link to this record in EThOS:
Title: An experimental and theoretical study of InGaP-GaAs double heterojunction bipolar transistors.
Author: Lee, Tae-Woo.
ISNI:       0000 0001 3607 4683
Awarding Body: University of Sheffield
Current Institution: University of Sheffield
Date of Award: 1992
Availability of Full Text:
Access from EThOS:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Molecular beam epitaxy