Use this URL to cite or link to this record in EThOS:
Title: Hot electron induced degradation in VLSI MOS devices.
Author: Zhao, Si Ping.
ISNI:       0000 0001 3577 5357
Awarding Body: University of Liverpool
Current Institution: University of Liverpool
Date of Award: 1993
Availability of Full Text:
Access from EThOS:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Substrate hot electron injection; CMOS wafers