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Title: Atomic level diffusion mechanisms in silicon.
Author: De Souza, Maria Merlyne.
ISNI:       0000 0001 3420 822X
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 1993
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Point defects; Self-diffusion; Dopant; Boron