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Title: The molecular beam epitaxial growth and characterization of gallium arsenide on silicon.
Author: Woolf, David Andrew.
ISNI:       0000 0001 3572 5288
Awarding Body: University of Wales.Cardiff
Current Institution: Cardiff University
Date of Award: 1990
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Solid-state physics