Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308174
Title: Ion assisted methods of deposition of SiC.
Author: Inoue, Shinichiro.
ISNI:       0000 0001 3586 769X
Awarding Body: University of Salford
Current Institution: University of Salford
Date of Award: 1996
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.308174  DOI: Not available
Keywords: Thin films; Ion beam processing
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