Use this URL to cite or link to this record in EThOS:
Title: Electrically active defects associated with dislocations and grain boundaries in silicon
Author: Ayres, J. R. A.
ISNI:       0000 0001 3434 0626
Awarding Body: University of Sussex
Current Institution: University of Sussex
Date of Award: 1995
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Polycrystalline silicon