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Title: A quantitative EBIC study of dislocations and their interaction with impurities in silicon.
Author: Fell, Timothy S.
ISNI:       0000 0001 3459 0473
Awarding Body: University of Oxford
Current Institution: University of Oxford
Date of Award: 1992
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Defects in semiconductors