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Title: A design study of high power microwave GaAs FET amplifier
Author: Cheng, Tze Chiang
ISNI:       0000 0001 3542 3474
Awarding Body: University of Warwick
Current Institution: University of Warwick
Date of Award: 1985
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An 8 GHz 10 Watt G&As FET power amplifier has been developed to replace the TWT in the digital microwave system. For a single bit stream of 91*04 Mbit/s, the residual bit error rate at 40 dBm output power level is 1.0 X lO-^ compared with 1.0 X 10for that of TWT. For minimizing the non-linearity of the amplifier, the constant gate voltage biasing network has been used and optimized, with the aid of automatic non-linearity measurement technique developed in the thesis. The AI^AM conversion ratio is 0.375 dB/dB and PM^AM is 0.84°/dB at rated output power level of the amplifier. The total mean-time-between-failure of the amplifier is 350,000 hours. The negative resistance effects in the power GaAs FET is also studied.
Supervisor: Not available Sponsor: General Electric Company ; Standard Telephones and Cables ; Northern Telecom Limited ; Bell-Northern Research
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: QC Physics ; TK Electrical engineering. Electronics Nuclear engineering