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Title: An examination of the damage caused by the reactive ion etching of gallium arsenide.
Author: Filleul, Maria Louise.
ISNI:       0000 0001 3464 9025
Awarding Body: University College London (University of London)
Current Institution: University College London (University of London)
Date of Award: 1990
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Semiconductors