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Title: Evaluation of SIMOX substrates using photoconductive frequency resolved spectroscopy
Author: Lourenco, Manon d'Assuncao
ISNI:       0000 0001 3612 9904
Awarding Body: University of Surrey
Current Institution: University of Surrey
Date of Award: 1991
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In this thesis the application of Photoconductive Frequency Resolved Spectroscopy (PCFRS) to determine excess carrier lifetime distributions and carrier recombination kinetics in non-trivial semiconductor systems is described. The excess carrier lifetime, as well as being of direct relevance to device performance, is also a critical parameter in determining the quality of the semiconductor system as it can provide information on the electrical activity of defects present in the material. The theory of this technique is developed beyond the current state-of-the-art and is applied in particular to the assessment of SIMOX material, where other more conventional techniques have proved unsuitable. A model to interpret the PCFRS response for carrier lifetime distributions, under different injection conditions, is developed and, for the first time, the effect of trapping is considered. We demonstrate how temperature dependent PCFRS can be used to obtain the major trap parameters. This analysis is then used to evaluate trap activation energies for a range of developmental SIMOX material produced both at Surrey and commercially. Our PCFRS results reveal that the SIMOX layers have a higher density of defects - as compared to standard device quality silicon substrates. Characteristic parameters of the dominant traps in these materials have been obtained from Arrhenius plots of the lifetime distributions. The defects found in these SIMOX layers are shown to be related to the high temperature anneal stage of the material production.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Solid-state physics