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Title: Simulation of dopant diffusion in silicon using finite element method : an adaptive meshing approach.
Author: Ismail, Razali.
ISNI:       0000 0001 3587 4451
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 1988
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Components