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Title: Modification of Schottky barriers on GaAs and other III-V semiconductors using a-Si:H interfacial layers.
Author: Sambell, Alistair John.
ISNI:       0000 0001 3548 0516
Awarding Body: University of York
Current Institution: University of York
Date of Award: 1991
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Semiconductor diode behaviour