Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.280347
Title: Strain evaluation in III-V semiconductor compounds from measurement of thickness fringe displacements
Author: Harvey, Alan John
ISNI:       0000 0004 2750 2342
Awarding Body: University of Surrey
Current Institution: University of Surrey
Date of Award: 1990
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Abstract:
A technique has been developed for the strain analysis of strained layer heterostructures using a comparison of electron microscope images and simulated images of cleaved wedges. The technique employs the strain relaxation at the edge of the wedge sample, which as the geometry is well known, can be computed using a finite element program. The microscope images of the structure can be taken so that they are independent of the composition and only sensitive to the strain. These images change quite considerably due to a small change in strain and so by comparison between the calculated and experimental images the strain can be measured with an accuracy of about 0.01%.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.280347  DOI: Not available
Keywords: Solid-state physics
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