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Title: Dopant incorporation, desorption and migration in MBE grown InP and Al←xGa←1←-←xAs/GaAs.
Author: Airaksinen, Veli-Matti.
ISNI:       0000 0001 3403 3335
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 1987
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Crystal growth/semiconductors