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Title: Simulation and modelling of power devices based on 4H silicon carbide
Author: Adachi, Kazuhiro.
ISNI:       0000 0001 3393 2267
Awarding Body: University of Newcastle upon Tyne
Current Institution: University of Newcastle upon Tyne
Date of Award: 2003
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Bipolar junction transistor