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Title: Evaluation of gallium arsenide Schottky Gate Bipolar Transistor for high-voltage power switching applications.
Author: Hossin, Mohamad Abdalla.
ISNI:       0000 0001 3582 1499
Awarding Body: University of Newcastle upon Tyne
Current Institution: University of Newcastle upon Tyne
Date of Award: 1998
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Semiconductors; MESFETs; Gate leakage current