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Title: Electronic and material properties of MOS-gated Si/Si←1←-←xGe←x P-channel heterostructures.
Author: Lander, Robert James Pascoe.
ISNI:       0000 0001 3604 6148
Awarding Body: University of Warwick
Current Institution: University of Warwick
Date of Award: 1997
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: MOSFET; Epitaxial growth; Bandstructure