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Title: Phonon emission from two dimensional carriers in GaAs.
Author: Xin, Zhijun.
ISNI:       0000 0001 3573 8265
Awarding Body: University of Nottingham
Current Institution: University of Nottingham
Date of Award: 1995
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Power dissipation; Semiconductors