Use this URL to cite or link to this record in EThOS:
Title: Ion bombardment induced damage and annealing in Si.
Author: Zeroual, Boudjemaa.
ISNI:       0000 0001 3577 0644
Awarding Body: University of Salford
Current Institution: University of Salford
Date of Award: 1990
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Semiconductor doping