Use this URL to cite or link to this record in EThOS:
Title: Schottky barriers and MOS structures on InP.
Author: Eftekhari, G.
ISNI:       0000 0001 3441 711X
Awarding Body: University of Nottingham
Current Institution: University of Nottingham
Date of Award: 1981
Availability of Full Text:
Access from EThOS:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Electronics and electrical engineering