Use this URL to cite or link to this record in EThOS:
Title: Electrical overstress failure in GaAs MESFET structures
Author: Franklin, Andrew John
ISNI:       0000 0001 3482 7485
Awarding Body: Loughborough University of Technology
Current Institution: Loughborough University
Date of Award: 1990
Availability of Full Text:
Access from EThOS:
Access from Institution:
An experimental and theoretical analysis has been carried out into the effects of electrostatic discharge and constant power electrical overstress in GaAs MES structures. An experimental system has been set up to measure the electrical and physical characteristics of such devices when subject to electrical overstress. This system includes computer controlled equipment to analyse the electrical failure waveforms. The results from the experimental study have been analysed to establish any patterns which characterise ESD breakdown. Using a new thermal breakdown model, analytical predictions of the power required to degrade these devices, for both constant power, and electrostatic discharge breakdown, have been carried out.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Semiconductor materials