Use this URL to cite or link to this record in EThOS:
Title: A TEM study of strained SiGe/Si and related heteroepitaxial structures
Author: Benedetti, Alessandro.
ISNI:       0000 0000 6814 3439
Awarding Body: University of Sheffield
Current Institution: University of Sheffield
Date of Award: 2002
Availability of Full Text:
Access from EThOS:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Semiconductor devices