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Title: An experimental and theoretical study of the hot-carrier energy distribution in VLSI MOSFETs
Author: Al-Harbi, Talal S.
ISNI:       0000 0001 3405 972X
Awarding Body: Loughborough University
Current Institution: Loughborough University
Date of Award: 1996
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MOSFET devices have, recently, been considered the basic building element in any electronic IC circuit or system. The great advances achieved by modem technologies has made it possible to scale-down considerably the MOSFET device (channel length L smaller than 0.5μm and oxide thickness smaller than 400Å) which appreciably influences the device performance and its operating parameters.
Supervisor: Not available Sponsor: Government of Saudi Arabia ; King Abdulaziz University, Jeddah
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Components