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Title: The structure and chemistry of InSb(001) and InP(001) : clean surface structure, halogen adsorption and layered halide growth by rotational epitaxy.
Author: Davis, Anthony Alan.
ISNI:       0000 0001 3415 5826
Awarding Body: University of Nottingham
Current Institution: University of Nottingham
Date of Award: 1997
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Semiconductors; Cadmium; Lead iodide