Use this URL to cite or link to this record in EThOS:
Title: The transient electrical performance of high power semiconductor devices.
Author: Hoban, Peter Thomas.
ISNI:       0000 0001 3579 4443
Awarding Body: Staffordshire University
Current Institution: Staffordshire University
Date of Award: 1998
Availability of Full Text:
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Solid-state physics