Use this URL to cite or link to this record in EThOS:
Title: Theory of shallow donor impurities in GaAs systems.
Author: Barmby, Patrick William.
ISNI:       0000 0001 3445 5626
Awarding Body: University of Nottingham
Current Institution: University of Nottingham
Date of Award: 1994
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Semiconductors