Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235735
Title: A study of shallow implants in silicon by secondary ion mass spectrometry
Author: Fox, Harvey Stuart
ISNI:       0000 0001 3479 8266
Awarding Body: University of Warwick
Current Institution: University of Warwick
Date of Award: 1989
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Abstract:
This project investigates the analysis of shallow implants by secondary ion mass spectrometry (SIMS) and the problems that arise from it. Ion implantation is now almost exclusively used in the manufacture of modern very large scale integration devices. The quantification of these implants can be carried out very successfully by SIMS. However the distortions that are present in any SIMS analysis are emphasised when the implanted layer is less than lOOnm below the surface. In order to characterize these distortions, it is necessary to be able to accurately parameterize the implant profile. Taking moments of the data was found to be a reliable method of doing this without constructing a distribution. Once a parameterizing method was found the differential shift was investigated in silicon, with and without a Si-MBE grown capping layer. The results suggested that the differential shift may be a depth dependant phenomenon. The effect of the amorphization of a crystal on ion implantation was investigated with respect to the change in sputter rate going through the damaged region. The effect of uneven etching on this study is discussed in detail. In order to overcome this uneven etching two different raster scan units are discussed. One, is a new totally computer controlled device for use on a new SIMS instrument. The other is a modification to an existing scan unit. This second unit has been used to make craters that are flat to 0.05%.
Supervisor: Not available Sponsor: Science and Engineering Research Council ; GEC Research Inc.
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.235735  DOI: Not available
Keywords: QC Physics
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