Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.731333
Title: Tunnelling effects in multiferroic tunnel junctions
Author: Apachitei, Geanina
Awarding Body: University of Warwick
Current Institution: University of Warwick
Date of Award: 2017
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Abstract:
The demands from electronic devices have always been to be portable, fast, non-volatile, more intelligent and to consume low energy. One way towards this goal is to introduce multifunctionality of materials in devices. Ferromagnetism and ferroelectricity are two order parameters that can be coupled in a limited number of multiferroics and their coexistence implies the control over magnetisation and polarisation with both electric and magnetic fields. Similar properties were observed at ferromagnetic/ferroelectric thin film interfaces and attracted attention, since high quality thin film devices can be easily obtained nowadays through monitoring in real time of their structural and physical properties. This effect was observed also in tunnel junction configurations, devices which are formed from metallic electrodes separated by a very thin insulating barrier. By combining a barrier with various ferroelectric order parameters (ferroelectric, antiferroelectric, ferrielectric) and ferromagnetic electrodes, multi-field controlled multi-state non-volatile memory devices can be obtained. Tunnelling processes, especially in junctions containing d orbital elements are not completely understood and need deeper investigation. In this thesis, multiferroic tunnel junctions with La0:7Sr0:3MnO3/PbTiO3/Co structure are shown to be functional down to 3 unit cells. Moreover, the domain structure is shown to change with thickness, going through complex patterns including toroidal flux closure structures. The fabrication and working principle of the novel antiferroelectric tunnel junctions are reported for the first time using La0:7Sr0:3MnO3/PbZrO3/Co structures. Both investigated systems exhibit a multiferroic interface characterised by a magnetoelectric coupling which can be tailored by switching the ferroelectric polarisation.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.731333  DOI: Not available
Keywords: QC Physics
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