Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708516
Title: GaN high-voltage transistors : an investigation of surface donor traps
Author: Longobardi, Giorgia
ISNI:       0000 0004 6060 6071
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 2015
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.708516  DOI: Not available
Keywords: Gallium nitride ; Transistors
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