Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.706884
Title: Engineered high-k oxides
Author: Weerakkody, D. A.
ISNI:       0000 0004 6059 5464
Awarding Body: University of Liverpool
Current Institution: University of Liverpool
Date of Award: 2016
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Abstract:
The evolution of integrated circuit technology over the five decades resulted in scaling down the minimum feature size of a transistor from 10 μm to ~14 nm. The high-k dielectrics were identified as potential candidates to replace SiO2 from 2007 due to the large leakage current observed when scaling down SiO2. These materials captured the attention of many researchers and led them to focus on many emerging applications in addition to metal oxide semiconductor field effect transistors (MOSFET). In this thesis, two emerging applications of high-k dielectrics were investigated: (i) germanium based MOSFETs and (ii) high frequency high speed rectifiers for optical rectennas.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.706884  DOI: Not available
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