Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.699452
Title: Prognostics and health management of power electronics
Author: Alghassi, Alireza
ISNI:       0000 0004 5989 6438
Awarding Body: Cranfield University
Current Institution: Cranfield University
Date of Award: 2016
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Abstract:
Prognostics and health management (PHM) is a major tool enabling systems to evaluate their reliability in real-time operation. Despite ground-breaking advances in most engineering and scientific disciplines during the past decades, reliability engineering has not seen significant breakthroughs or noticeable advances. Therefore, self-awareness of the embedded system is also often required in the sense that the system should be able to assess its own health state and failure records, and those of its main components, and take action appropriately. This thesis presents a radically new prognostics approach to reliable system design that will revolutionise complex power electronic systems with robust prognostics capability enhanced Insulated Gate Bipolar Transistors (IGBT) in applications where reliability is significantly challenging and critical. The IGBT is considered as one of the components that is mainly damaged in converters and experiences a number of failure mechanisms, such as bond wire lift off, die attached solder crack, loose gate control voltage, etc. The resulting effects mentioned are complex. For instance, solder crack growth results in increasing the IGBT’s thermal junction which becomes a source of heat turns to wire bond lift off. As a result, the indication of this failure can be seen often in increasing on-state resistance relating to the voltage drop between on-state collector-emitter. On the other hand, hot carrier injection is increased due to electrical stress. Additionally, IGBTs are components that mainly work under high stress, temperature and power consumptions due to the higher range of load that these devices need to switch. This accelerates the degradation mechanism in the power switches in discrete fashion till reaches failure state which fail after several hundred cycles. To this end, exploiting failure mechanism knowledge of IGBTs and identifying failure parameter indication are background information of developing failure model and prognostics algorithm to calculate remaining useful life (RUL) along with ±10% confidence bounds. A number of various prognostics models have been developed for forecasting time to failure of IGBTs and the performance of the presented estimation models has been evaluated based on two different evaluation metrics. The results show significant improvement in health monitoring capability for power switches. Furthermore, the reliability of the power switch was calculated and conducted to fully describe health state of the converter and reconfigure the control parameter using adaptive algorithm under degradation and load mission limitation. As a result, the life expectancy of devices has been increased. These all allow condition-monitoring facilities to minimise stress levels and predict future failure which greatly reduces the likelihood of power switch failures in the first place.
Supervisor: Perinpanayagam, Suresh Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.699452  DOI: Not available
Keywords: Prognostics and Health Management ; Power Electronics ; Insulated Gate Bipolar Transistor ; Integrated System Health Management ; Remaining Useful Life ; Condition-Based Monitoring ; Coffin-Manson Rule ; Failure Mechanisms
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