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Title: Transmission electron microscopy of indium gallium nitride nanorods
Author: Webster, Richard Francis
ISNI:       0000 0004 5923 1807
Awarding Body: University of Bristol
Current Institution: University of Bristol
Date of Award: 2016
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Indium Gallium Nitride (InxGa1_xN) and associated III-nitride compounds are widely researched for optoelectronic applications such as solar cells and light emitting and laser diodes. These materials generally suffer from high threading dislocation densities (> x 109 cm-2) due to a large lattice mismatch between the nitride film and foreign substrates used for growth. This thesis is primarily concerned with studying the structural and compositional characterisation of InxGa1-xN nanorod arrays which may be used to reduce dislocation densities. Indium nitride and InxGa1-xN nanorods arrays have been grown on silicon (111) substrates at the University of Nottingham using plasma-assisted molecular beam epitaxy (PA-MBE).
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available