Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.682964
Title: MBE growth and characterization of lattice mismatched III-antimonide semiconductors
Author: Shen, Huiping
ISNI:       0000 0004 5915 9147
Awarding Body: University of Warwick
Current Institution: University of Warwick
Date of Award: 2015
Availability of Full Text:
Access through EThOS:
Access through Institution:
Abstract:
In recent years, there emerges intense research on heteroepitaxial growth of semiconductors, especially towards the material systems with interesting optical and physical properties. In particular, as the invention and advancement of modern growth techniques such as MOCVD and MBE, the research in microstructures and quantum devices has been largely promoted. The thesis was focused on the fundamental research on the heteroepitaxial growth of III-Sb semiconductors, particularly on the InSb/GaSb (001) QD ensembles and III-Sb / GaAs (001) heterostructures. The growth was undertaken on GEN II MBE apparatus and the optimum growth parameters were obtained for the growth of the materials in the lab. After the growth, the structural and electrical properties of the corresponding samples were investigated by AFM, TEM, PL and Hall measurement. Large work has been undertaken to assess the effect of growth parameters such as growth temperature, growth rate and III/V ratio on the structural and electrical properties of QDs. InSb/GaSb QDs with high number density (~ 1011 cm-2) and narrow size distribution have been obtained. To evaluate the quantum effect of these dots, the PL measurements taken from 2.5ML buried InSb layer grown at 275°C manifested QDs emitted at 3.4 µm upto room temperature. In addition to the QDs research, primary investigations of the surface morphologies, defects, and the electrical properties were presented for the III-Sb/GaAs heterostructures. In the end, the theoretical and experimental analysis of the optical properties of InSb/GaAs and GaSb/GaAs have been presented.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.682964  DOI: Not available
Keywords: TK Electrical engineering. Electronics Nuclear engineering
Share: