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Title: Next-generation GaN power semiconductor devices
Author: Unni, Vineet
ISNI:       0000 0004 5916 1220
Awarding Body: University of Sheffield
Current Institution: University of Sheffield
Date of Award: 2015
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Full text unavailable from EThOS. Thesis embargoed until 01 Nov 2020
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No abstract available
Supervisor: Ekkanath Madathil, Shankar Narayanan Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available