Use this URL to cite or link to this record in EThOS:
Title: High-ĸ gate dielectrics on germanium
Author: Murad, S. N. A.
ISNI:       0000 0004 5372 810X
Awarding Body: Queen's University Belfast
Current Institution: Queen's University Belfast
Date of Award: 2014
Availability of Full Text:
Full text unavailable from EThOS.
Please contact the current institution’s library for further details.
Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. Ge02 has been investigated as an interfacial layer for high-K gate stacks on germanium. Thermally grown Ge02 layers have been prepared at 550°C to minimize GeO volatilization. Ge02 growth has been performed in both pure O2 ambient and O2 diluted with N2. Ge02 thickness has been scaled down to approximately 3 nm. This is the first time ever Ge02 has been scaled using dilution method. MOS capacitors have been fabricated using Ge02 grown in various ambient and different thicknesses with a standard high-K dielectric on top. Electrical properties and thermal stability have been tested up to at least 350°C. The K value of Ge02 was experimentally determined to be 4.5. Interface state densities (Did of less than 1012 cm-2eV-1 have been extracted for all devices using the conductance method.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available