Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.680229
Title: High-ĸ gate dielectrics on germanium
Author: Murad, S. N. A.
ISNI:       0000 0004 5372 810X
Awarding Body: Queen's University Belfast
Current Institution: Queen's University Belfast
Date of Award: 2014
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Abstract:
Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. Ge02 has been investigated as an interfacial layer for high-K gate stacks on germanium. Thermally grown Ge02 layers have been prepared at 550°C to minimize GeO volatilization. Ge02 growth has been performed in both pure O2 ambient and O2 diluted with N2. Ge02 thickness has been scaled down to approximately 3 nm. This is the first time ever Ge02 has been scaled using dilution method. MOS capacitors have been fabricated using Ge02 grown in various ambient and different thicknesses with a standard high-K dielectric on top. Electrical properties and thermal stability have been tested up to at least 350°C. The K value of Ge02 was experimentally determined to be 4.5. Interface state densities (Did of less than 1012 cm-2eV-1 have been extracted for all devices using the conductance method.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.680229  DOI: Not available
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