Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.675949
Title: Integration of oxynitride barriers by reactive RF sputtering for use in magnetic tunnel junctions
Author: Atcheson, Gwénaël Yves Peter
ISNI:       0000 0004 5372 183X
Awarding Body: Queen's University Belfast
Current Institution: Queen's University Belfast
Date of Award: 2014
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Abstract:
Magnetic field sensors were developed with use of a SFI Shamrock sputtering tool. GMR spin-valve type sensors were developed in CIP geometry requiring no additional processing once deposited, and TMR magnetic tunnel junctions were developed in CPP. This meant the additional development of a photolithographic process in order to produce working devices. The MTJs used MgO as a tunneling barrier in reference devices, and a novel oxynitride barrier in experimental devices deposited by reactive RF sputtering from an elemental target in a variable argon/oxygen/nitrogen atmosphere. Devices produced show potential for further development.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.675949  DOI: Not available
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