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Title: TEM studies of defects in GaInAs and GaInP epitaxial layers
Author: Hockley, Mark
Awarding Body: University of Oxford
Current Institution: University of Oxford
Date of Award: 1983
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No abstract available
Supervisor: Booker, G. R. Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Transmission electron microscopy ; Gallium compounds ; Indium compounds ; Materials--Defects ; Molecular beam epitaxy